Memory MEMS

MEMS Technology in Memory Fields

Conventional semiconductor technologies are have been suffered from a number of difficult challenges in continuing to scale beyond sub-100nm such as short-channel effect, quantum tunneling effect through gate-oxide, sub-threshold characteristic limitation, power dissipation, and soft error have been encountered. Furthermore there is no more improvement in economical productivity and device performance in the recent semiconductor technology. To scale-down the device, it requires highly advanced lithography technology and huge amount of investment, but they are not cost effective anymore. To find out solutions for the conventional semiconductor technologies, we newly propose the emerging memory technology using Nano Electro Mechanical System (NEMS). NEMS based memory devices expected to have low operation voltage, almost zero leakage current, low power consumption, high speed operation and also 3D multi-layer high density stacking.



  • Lee Byung-Ki (Ph.D. Candidate, 5th year)
  • Lee Jeung-Oen (Ph.D. Candidate, 3rd year)
  • Yang Hyun-Ho (Ph.D. Candidate, 2nd year)
  • Kim Min-Woo (Ph.D. Candidate, 2nd year)
  • Ko Seung-Duk (Ph.D. Candidate, 1st year)
  • Choi Seonjin (M.S. Candidate, 1st year)

Published Paper

[1] Weon-Wi Jang, Jeong-Oen Lee, and Jun-Bo Yoon, “A DRAM-LIKE MECHANICAL NON-VOLATILE MEMORY”, Transducers 2007, The 14th international conference on solid-state sensors, actuators and microsystems, Lyon, France. vol. 38, vol. 2, pp. 2187-21908, 2007

[2] Weon Wi Jang, O Deuk Kwon, Jeong Oen Lee, and Jun-Bo Yoon, “Microelectromechanical switch and Inverter for Digital IC application”, A-SSCC 2007, JeJu, Korea, pp. 256-259 .2007

[3] Weon Wi Jang, Jeong Oen Lee, Jun-Bo Yoon, Min-Sang Kim, Ji-Myoung Lee, Sung-Min Kim, Keun-Hwi Cho, Dong-Won Kim, Donggun Park, Won-Seong Lee, “Fabrication and Characterization of a Nanoelectromechanical Switch with 15nm-Thick Suspension Air-Gap” ,Appl. Phys. Lett. 92, 103110 (2008), DOI:10.1063/1.2892659, 2008

[4] Weon Wi Jang, Jeong Oen Lee, Hyun-Ho Yang, and Jun-Bo Yoon, “Mechanically Operated Random Access Memory (MORAM) Based on an Electrostatic Microswitch for Nonvolatile Memory Applications” IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 55, NO. 10″

[5] Hyun-Ho Yang, Jeong Oen Lee, Jun-Bo Yoon, “Maneuvering Pull-in Voltage of an Electrostatic Micro-switch by Introducing a Pre-charged Electrode”, IEEE International Electron Device Meeting 2007, Washington DC, USA. pp. 439-442.

[6] Weon Wi Jang , Jun-Bo Yoon , Min-Sang Kim , Ji-Myoung Lee , Sung-Min Kim , Eun-Jung Yoon ,Keun Hwi Cho , Sung-Young Lee , In-Hyuk Choi , Dong-Won Kim , Donggun Park , “NEMS switch with 30 nm-thick beam and 20 nm-thick air-gap for high density non-volatile memory applications,” Solid State Electronics 52 (2008) pp. 1578-1583″